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HAT1043M
Silicon P Channel Power MOS FET Power Switching
REJ03G1151-0600 (Previous: ADE-208-754D) Rev.6.00 Sep 07, 2005
Features
* * * * Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source
Outline
RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6)
1256 DDDD 4
3
6
5
3 G
1
2
4 3 1, 2, 5, 6
Source Gate Drain
S 4
Rev.6.00 Sep 07, 2005 page 1 of 6
HAT1043M
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note 2 IDR
Note 1
Value -20 12 -4.4 -17.6 -4.4 2.0 1.05 150 -55 to +150
Unit V V A A A W W C C
Pch (pulse) Note 3 Pch (continuous) Tch Tstg
Note 2
Notes: 1. PW 10 s, duty cycle 1% 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW 5 s, Ta = 25C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min -20 -- -- -0.4 -- -- 4 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 55 85 7 750 310 220 11 2 3.5 15 100 85 100 -0.95 50 Max -- 0.1 -1 -1.4 65 110 -- -- -- -- -- -- -- -- -- -- -- -1.23 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns IF = -4.4 A, VGS = 0 IF = -4.4 A, VGS = 0 diF/dt = -20 A/s Test Conditions ID = -10 mA, VGS = 0 VGS = 12 V, VDS = 0 VDS = -20 V, VGS = 0 ID = -1 mA, VDS = -10 V Note 4 ID = -3 A, VGS = -4.5 V ID = -3 A, VGS = -2.5 V Note 4 ID = -3 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -4.5 V ID = -4.4 A VGS = -4.5 V, ID = -3 A, RL = 3.3
Note 4
Rev.6.00 Sep 07, 2005 page 2 of 6
HAT1043M
Main Characteristics
Power vs. Temperature Derating
2.0 -100 -30 10 s
Maximum Safe Operation Area
Pch (W)
ID (A)
1.5
-10 -3 -1 -0.3 -0.1
Channel Dissipation
1.0
0.5
Drain Current
1 m =1 s 0m Op s( 1s er ho at ion t) (P Operation in W this area is 5 s) limited by R N
DC
DS (on)
ot e 5
PW
100 s
0 0 50 100 150 200
-0.03 Ta = 25C 1 shot pulse -0.01 -1 -0.1 -0.3
-3
-10
-30
-100
Ambient Temperature
Ta (C)
Drain to Source Voltage VDS (V)
Note 5: When using the alumina ceramic board (50 x 50 x 0.7 mm)
Test Condition: When using the alumina ceramic board (50 x 50 x 0.7 mm), (PW 5 s)
Typical Output Characteristics
-10 -10 V -4 V Pulse Test -10
Typical Transfer Characteristics
VDS = -10 V Pulse Test
ID (A) Drain Current
-2 V
ID (A)
-8
-3 V -2.5 V
-8
-6
-6
Drain Current
-4
-4 Tc = -25C 75C 0 0 -1 25C -2 -3 -4 -5
-2 VGS = -1.5 V 0 0 -2 -4 -6 -8 -10
-2
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) (m)
1000 Pulse Test 500
Drain to Source Saturation Voltage VDS (on) (V)
-0.5
-0.4
200 100 50 VGS = -2.5 V
-0.3 ID = -5 A -0.2 -2 A -1 A 0 -4 -8 -12 -16 -20
-4.5 V
-0.1
20 10 -0.1 -0.2
0
-0.5 -1
-2
-5 -10 -20
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.6.00 Sep 07, 2005 page 3 of 6
HAT1043M
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance |yfs| (S)
250 Pulse Test 200 -1 A, -2 A ID = -5 A 100 -2.5 V -5 A -1 A, -2 A VGS = -4.5 V 0 -50 0 50 100 150 200
50 20 10 5 25C 2 1 0.5 0.2 0.1 -0.1 -0.3 -1 -3 VDS = -10 V Pulse Test -10 -30 -50 75C Tc = -25C
150
50
Case Temperature
Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
3000 1000 Ciss Coss Crss
Body-Drain Diode Reverse Recovery Time
500
Reverse Recovery Time trr (ns)
200 100 50
Capacitance C (pF)
di / dt = 20 A / s VGS = 0, Ta = 25C -0.5 -1 -2 -5 -10
300 100
20 10 -0.1 -0.2
30 VGS = 0 f = 1 MHz 10 0 -4 -8 -12 -16 -20
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDS (V)
-2
Switching Time t (ns)
-10
VDD = -5 V -10 V -20 V VGS VDS VDD = -5 V -10 V -20 V
VGS (V)
0
0
1000 500 tr 200 100 50 20 td(on) td(off) tf
Drain to Source Voltage
-20
-4
-30
-6
-40 ID = -4.4 A 0 4 8 12 16
-8
Gate to Source Voltage
-50
-10 20
10 VGS = -4.5 V, VDD = -10 V PW = 5 s, duty 1 % 5 -5 -10 -20 -0.1 -0.2 -0.5 -1 -2
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.6.00 Sep 07, 2005 page 4 of 6
HAT1043M
Reverse Drain Current vs. Source to Drain Voltage
-10
Reverse Drain Current IF (A)
-8 -5 V -6
-4
VGS = 0, 5 V
-2
Pulse Test
0 0 -0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage
VSDF
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.2
0.1
0.1 0.05
0.02 0.01
o sh tp uls e
0.01
ch - f (t) = s (t) * ch - f ch - f = 119C/W, Ta = 25C When using the alumina ceramic board (50 x 50 x 0.7 mm) PDM PW T D= PW T
0.001
1
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Vin Vin Monitor D.U.T. RL Vout Monitor
Switching Time Waveform
10% 90% 90% 90%
Vin 10 V
50
VDD = -10 V Vout td(on) 10% tr td(off) 10% tf
Rev.6.00 Sep 07, 2005 page 5 of 6
HAT1043M
Package Dimensions
JEITA Package Code SC-95 Modified RENESAS Code PTSP0006FA-A Package Name TSOP-6 / TSOP-6V MASS[Typ.] 0.012g
D e
A Q c
E
HE
L L1 A A xM S A b e A3
LP
Reference Symbol Dimension in Millimeters
A2
A
yS
A1 S
e1
b b1 c A-A Section c1
I1
b2 Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x y b2 e1 I1 Q
Min 0.8 0 0.8 0.25 0.1 2.8 1.45 2.6 0.3 0.1 0.2
Nom
0.9 0.25 0.32 0.3 0.13 0.11 2.95 1.6 1.0 2.8
Max 1.1 0.1 1.0 0.4 0.15 3.1 1.75 3.0 0.7 0.5 0.6 0.05 0.05 0.45 0.8
2.2 0.2
Ordering Information
Part Name Quantity Shipping Container HAT1043M-EL-E 3000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.6.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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